
About TagoreTech, Inc.
TagoreTech is pioneering a new semiconductor process that enables high RF power at competitive price points. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, Phoenix, AZ and Kolkata India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that address RF design challenges and accelerate time- to-market for a wide range of applications, from 5G cellular infrastructure to consumer electronics, automotive, and defense and security. Our high-power products, including RF switches, RF low-noise amplifiers, and RF power amplifiers, are essential for wireless infrastructure and high-power radios. We partner with leading semiconductor foundries and assembly houses to deliver products that offer premium quality and proven high reliability. Learn more about us at www.tagoretech.com.
Tagore Tech is seeking a talented and motivated Principal RF Design Engineer to join our elite RF engineering team. In this role, you will lead the creation of next-generation product technology for high-power radios used in Military Communications, Cellular Infrastructure, Radar, Unmanned Aerial Vehicles (Drones), and Medical applications. You will be responsible for architecting and designing high-power RF switches, Power Amplifiers (PAs), Low Noise Amplifiers (LNAs), and integrated Front-End Modules (FEMs) leveraging Wide Bandgap (GaN and GaAs) technologies.
Key Responsibilities
Qualifications
Education: MSEE with 15+ years OR PhD with 10+ years of hands-on RFIC / MMIC design experience. * **
Core Design Expertise: Proven track record in transistor-level RF design, particularly with high-power RF circuits utilizing GaN or GaAs processes.
Tools & Simulation: Expert-level proficiency with Cadence, Keysight ADS, or AWR MWO, including non-linear modeling and 2D/3D EM simulation tools (e.g., HFSS, Sonnet).
Semiconductor Physics: Strong understanding of basic device physics, linear/nonlinear model translation, and physical implementation constraints.
Lab & Test: Practical experience in RF characterization techniques and high-power lab equipment (VNAs, spectrum analyzers, power meters, load-pull systems).
Preferred Experience: Prior design experience with RF SOI switches, PIN diode switches, or high-efficiency GaN Power Amplifiers. Deep understanding of high-power thermal management and custom RF package parasitic co-design.
Success Traits
This position offers an exciting opportunity for professional growth in a fast-paced environment where innovation is encouraged. If you are passionate about RF engineering and eager to contribute your expertise, we invite you to apply for this rewarding role. Tagore offers a competitive compensation and benefits package, as well as opportunities for professional growth and development.
Research & Development
Arlington Heights, IL
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